Research & Development
Technology Areas
Engineering Support
Discuss custom PDKs, design rules, and shuttle runs with our process engineering team.
Contact EngineeringContinuous innovation is required to break through the limits of silicon physics. Our R&D division focuses on next-generation materials, structures, and manufacturing techniques.
Wide Bandgap Materials
Development pipelines for Gallium Nitride (GaN) and Silicon Carbide (SiC) epitaxy, crucial for high-efficiency EV powertrains and renewable energy inverters.
- GaN-on-Si & GaN-on-SiC epitaxy
- SiC MOSFET process development
- High-temperature operation (>200°C)
- Targeted at EV & renewable energy
Advanced MEMS
Specialized cavity etching and wafer-level capping for high-precision gyroscopes, environmental sensors, and bio-medical microfluidics.
- Deep reactive ion etching (DRIE)
- Wafer-level vacuum packaging
- Piezoelectric & capacitive transducers
- Bio-MEMS for lab-on-chip
Research Collaboration
We actively collaborate with leading academic institutions and government research labs to advance semiconductor science and develop next-generation fabrication technologies.
Materials Science
Novel epitaxial growth techniques and characterization
Device Physics
Quantum well structures and high-mobility channels
Process Integration
Advanced lithography and etch technology development
Innovation Pipeline
With over 50 active research projects and partnerships with 10+ universities, we're building the future of semiconductor manufacturing.