Research & Development
Technology
Continuous innovation is required to break through the limits of silicon physics. Our R&D division focuses on next-generation materials, structures, and manufacturing techniques.
Wide Bandgap Materials
Development pipelines for Gallium Nitride (GaN) and Silicon Carbide (SiC) epitaxy, crucial for high-efficiency EV powertrains and renewable energy inverters.
- GaN-on-Si & GaN-on-SiC epitaxy
- SiC MOSFET process development
- High-temperature operation (>200°C)
- Targeted at EV & renewable energy
Advanced MEMS
Specialized cavity etching and wafer-level capping for high-precision gyroscopes, environmental sensors, and bio-medical microfluidics.
- Deep reactive ion etching (DRIE)
- Wafer-level vacuum packaging
- Piezoelectric & capacitive transducers
- Bio-MEMS for lab-on-chip
Research Collaboration
We actively collaborate with leading academic institutions and government research labs to advance semiconductor science and develop next-generation fabrication technologies.
Materials Science
Novel epitaxial growth techniques and characterization
Device Physics
Quantum well structures and high-mobility channels
Process Integration
Advanced lithography and etch technology development
Innovation Pipeline
With over 50 active research projects and partnerships with 10+ universities, we're building the future of semiconductor manufacturing.