Research & Development
Technology
Continuous innovation is required to break through the limits of silicon physics. Our R&D division focuses on next-generation materials and structures.
Wide Bandgap Materials
Development pipelines for Gallium Nitride (GaN) and Silicon Carbide (SiC) epitaxy, crucial for high-efficiency EV powertrains and renewable energy inverters.
Advanced MEMS
Specialized cavity etching and wafer-level capping for high-precision gyroscopes, environmental sensors, and bio-medical microfluidics.