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Process

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Our Process

Our commitment to our vision drives everything we do. We combine decades of domain expertise with cutting-edge cloud software and automated production lines to deliver unprecedented results.

Uncompromising Precision & Isolation

We execute two distinct frontend process paradigms within our facilities, defined by rigorous systemic isolation to prevent cross-contamination.

1. Silicon CMOS Flow

Mixed-Signal/IoT/PMIC

Wafer Preparation & Isolation

Initial wet chemical cleaning of high-purity 200mm/300mm p-type silicon. Isolation via Shallow Trench Isolation (STI) using dry ArF lithography.

Drive-In Annealing

High-energy ion implantation followed by thermal drive-in annealing generates deep n-well and p-well regions.

Multi-Layer Metallization

Ultra-thin oxide growth paired with polysilicon layer chemical vapor deposition, leveraging copper dual-damascene workflows.

2. Compound & MEMS Flow

III-V Structures

MOCVD Growth

Metal-Organic Chemical Vapor Deposition growth of active Gallium Arsenide (GaAs) or Indium Phosphide (InP) single-crystal compound layers.

Deep Reactive Ion Etching

Deep MEMS structures require thick resist profiles followed by DRIE utilizing the cyclic Bosch method.

Hermetic Sealing

Specialized electron-beam evaporation deposits non-oxidizing layers. Automated wafer bonding hermetically locks the active and physical MEMS sensor chambers.

Zero-Gold Zone Enforcement

A signature challenge of our mixed-use park is preventing cross-contamination. Our Silicon Logic facility operates as a strict Zero-Gold zone, utilizing completely isolated HVAC systems, separate chemical drainage loops, and dedicated sub-fab toxic gas scrubbers.

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INDNIX Technology Limited

Rishi Bankim Shilpaudyan, Naihati, West Bengal, 743165, India

Headquarters

INDNIX Technology Limited

Rishi Bankim Shilpaudyan, Naihati, WB

Direct Line

+91-8100488233

Official Inquiry

official@indnix.com